features marking: 1 h igh diode semiconductor sot- 23 ?? ? symbol parameter value unit v collector-base voltage 60 v v ce o collector-emitter voltage 50 v v eb o emitter-base voltage 5 v i c co llector current 150 ma p c co llector power dissipation 200 mw r j a thermal resistance from junction to ambient 625 /w t j jun ction temperature 150 t st g storage temperature -55 +150 classification of h fe electrical characteristics (t =25 unless otherwise specified cr sot -23 plastic-encap sulate transistors transistor( np n ) e b c cbo 2SC945 excellent h fe linearity low noise parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br) cbo i c =100ua, i e =0 60 v collector-emitter breakdown voltage v (br) ceo i c =1ma , i b =0 50 v emitter-base breakdown voltage v (br) ebo i e =0.1ma, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 ua collector cut-off current i cer v ce =55v,r=10m ? 0.1 ua emitter cut-off current i ebo v eb =5v , i c =0 0.1 ua h fe(1) v ce =6 v , i c =1ma 130 400 dc current gain h fe(2) v ce =6 v , i c =0.1ma 40 collector-emitter saturation voltage v ce (sat) i c =100ma, i b =10ma 0.3 v base-emitter saturation voltage v be (sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =6v,i c =10ma,f =30 mhz 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mh z 3.0 pf noise figure nf v ce = 6v,i c =0.1 ma r g =10 k ? ,f=1k mh z 4 10 db rank l h range 130-200 200-400
h l j k ' l r g h 6 h p l f r q g x f w r u 7 \ s l f d o & k d u d f w h u l v w l f v 024681012 0 2 4 6 8 10 12 0.1 1 10 100 200 400 600 800 1000 1 10 100 10 100 1 10 100 10 100 1000 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0.1 1 10 0 5 10 15 common emitter t a =25 24ua 9ua 30ua 27ua 21ua 18ua 15ua 12ua 6ua i b =3ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 30 3 0.3 150 v besat ?? i c base-emitter saturation voltage v besat (mv) collector current i c (ma) =10 t a =100 t a =25 30 3 0.3 30 3150 collector current i c (ma) collector-emitter saturation voltage v cesat (mv) t a =100 t a =25 =10 v cesat ?? i c 300 30 30 3 0.7 300 dc current gain h fe collector current i c (ma) t a =25 t a =100 v ce =6v i c h fe ?? 150 collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a capacitance c (pf) reverse bias voltage v (v) c ob c ib f=1mhz i e =0 /i c =0 t a =25 v cb / v eb c ob / c ib ??
jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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